pnp bd676/a - bd678/a - bd680/a - bd682/a comset semiconductors 1 silicon darlington power transistors the bd676/a-bd678/a-bd680/a-bd682/a are pnp transistors mounted in jedec to-126 plastic package. they are eptaxial-base transistors in mono lithic darlington circuit for audio and video applications. npn complements are bd675/a-bd677/a-bd679/a-bd681/a compliance to rohs. absolute maximum ratings symbol ratings value unit -v ceo collector-emitter voltage bd676/a 45 v bd678/a 60 bd680/a 80 bd682/a 100 -v cbo collector-base voltage bd676/a 45 v bd678/a 60 bd680/a 80 bd682/a 100 -v ebo emitter-base voltage 5 v -i c collector current -i c 4 a -i cm 6 -i b base current (peak value) -i bm 0.1 a p t total power dissipation @ t mb = 25c 40 w t j junction temperature 150 c t st g storage temperature -65 to +150 c thermal characteristics symbol ratings value unit r thj-mb thermal resistance, junction to mouting base 3.12 k/w r thj-a thermal resistance, junction to ambient in free air 100 k/w
pnp bd676/a - bd678/a - bd680/a - bd682/a comset semiconductors 2 electrical characteristics tc=25c unless otherwise noted symbol ratings test condition(s) min typ max unit -i cbo collector cut-off current i e =0 , -v cb = - 45 v bd676/a - - 0,2 ma i e =0 , -v cb = - 60 v bd678/a - - 0,2 i e =0 , -v cb = - 80 v bd680/a - - 0,2 i e =0 , -v cb = - 100 v bd682/a - - 0,2 i e =0 , -v cb = - 45v, t j = 150c bd676/a - - 2 i e =0 , -v cb = - 60v, t j = 150c bd678/a - - 2 i e =0 , -v cb = - 80v, t j = 150c bd680/a - - 2 i e =0 , -v cb = - 100v t j = 150c bd682/a - - 2 -i ceo collector cut-off current i b =0 , -v ce = -?v ceomax bd676/a - - 0,5 ma bd678/a - - 0,5 bd680/a - - 0,5 bd682/a - - 0,5 -i ebo emitter cut- offcurrent i c =0, -v eb =5 v - - 5 ma -v ceo(sus) collector-emitter sustaning voltage i b =0 , -i c =50 ma bd676/a 45 v - v bd678/a 60 - bd680/a 80 - bd682/a 100 - -v ce(sat) collector-emitter saturation voltage bd676, bd678, bd680, bd682 -i c =1.5 a, -i b =30 ma - - 2,5 v bd676a, bd678a, BD680A, bd682a -i c =2 a, -i b =40 ma - - 2.8 h fe dc current gain bd676, bd678, bd680, bd682 -v ce =3 v, -i c =500 ma - 2200 - bd676, bd678, bd680, bd682 -v ce =3 v, -i c =1,5 a 750 - - bd676, bd678, bd680, bd682 -v ce =3 v, -i c =4 a - 650 - bd676a, bd678a, BD680A, bd682a -v ce =3 v, -i c =2 a 750 - - -v be base-emitter voltage(1&2) bd676, bd678, bd680, bd682 -v ce =3 v, -i c =1,5 a - - 2,5 v bd676a, bd678a, BD680A, bd682a -v ce =3 v, -i c =2 a - - 2.5 h fe small signal current gain -v ce =3 v, -i c =1,5 a, f= 1 mhz 10 - - f hfe ut-off frequency -v ce =3 v, -i c =1,5 a - 60 - khz v f diode forward voltage i f =1,5 a - 1,5 - v -i (sb) second- breakdown collector current -v ce =50 v, t p = 20ms,non rep., without heatsink 0,8 - - a
pnp bd676/a - bd678/a - bd680/a - bd682/a comset semiconductors 3 symbol ratings test condition(s) min typ max unit t on turn-on time -i con = 1,5a, -i bon = i boff = 6ma, - 0,3 1.5 s t of f turn-off time - 1,5 5 1. measured under pulse conditions : t p <300s, <2%. 2. v be decreases by about 3,6 mv/k wi th increasing temperature. mechanical data case to-126 revised august 2012 ????????? ? information furnished is believed to be accurate and reliable. ho wever, comset semic onductors assumes no responsibility for the consequences of use of such information nor for any infr ingement of patents or other rights of th ird parties which may results from its use. data are subject to change without notice. comset semiconductors makes no warranty, representation or guarantee regar ding the suitability of its pr oducts for any particular purpose, nor does comset semiconductors assume any li ability arising out of the application or use of any product an d specifically disclaims any and all liability, including without limitation co nsequential or incidental damages. comset semiconductors? produ cts are not authorized for use as critical compone nts in life support devices or systems. ? ? www.comsetsemi.com info@comsetsemi.com dimensions min max a 7.4 7.8 b 10.5 10.8 c 2.4 2.7 d 0.7 0.9 e 2.25 typ. f 0.49 0.75 g 4.4 typ. l 15.7 typ. m 1.27 typ. n 3.75 typ. p 3.0 3.2 s 2.54 typ. pin 1 : emitter pin 2 : collector pin 3 : base
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